報告時間：4月10日 週三 上午9:30
報告題目： 石墨烯化學氣相沉積法可控制備（Controllable synthesis of graphene by chemical vapor deposition）
To date, synthesis of graphene by chemical vapor deposition of hydrocarbons, particularly on Cu substrate, exhibits great potential as a cost-effective way to produce high-quality and large-area graphene films. Control on graphene crystal size, growth rate, layer number, defects, etc. is the key to develop graphene synthetic techniques. This talk focuses on the following aspects: (1) Other than the wildly investigated processing parameters such as temperature and reaction gases, we identified the carbon and oxygen contamination in the CVD system and revealed how they affect system reliability, which is helpful to further understand graphene growth kinetics. (2) We synthesized large-area single-layer graphene without any adlayers in a simple way by just suspending the Cu foil. The finding is not only of great significance for the industrial production of large-area adlayer-free SLG films but also instructive for the synthesis of homogeneous few-layer graphene. (3) We synthesized highly aligned graphene domains on almost arbitrary Cu surface, providing a more facile way for the synthesis of large-area graphene single crystal. (4) We proposed a general and simple method to evaluate the electrical transport performance of graphene by the van der Pauw – Hall measurement.